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Gallium selfdiffusion in GaAs was investigated using 69GaAs/71GaAs isotope heterostructures. Wang: Defect and Diffusion Forum, 1997, 143-147, 1067-78 [106] GaAs: Ga Surface Diffusion An extension of the high-energy electron reflection diffraction oscillation technique to vicinal surfaces provided a method for studying surface diffusion during molecular beam epitaxial growth. Results for Ga diffusion during the growth of GaAs films with (001) 2 x 4 and 3 x 1 reconstructed surfaces were presented.

Plummer: Journal of Applied Physics, 1997, 81[4], 16706 [101] GaAs: Ga Diffusion Diffusion was studied in samples of molecular beam epitaxial material. The diffusion profiles of samples which had been annealed under various conditions were determined by using secondary ion mass spectrometry. Plummer: Journal of Applied Physics, 1995, 78[3], 1595-605 [102] GaAs: Ga Diffusion Studies were made of self-diffusion and interdiffusion in buried Al71GaAs/ Al69GaAs/71GaAs and AlAs/71GaAs isotope heterostructures at 800 to 1160C.

Plummer: Journal of Applied Physics, 1997, 81[4], 16706 [133] GaAs: Zn Diffusion Studies were made of Zn diffusion at 700 to 1100C using three different Zn diffusion sources. To compare the penetration curves for the different sources, reduced penetration depths and reduced concentrations were calculated. Numerical simulation of Zn diffusion transport gave a good description for particular sources. Mehrer: Defect and Diffusion Forum, 1997, 143-147, 1117-24 [134] GaP: Ga Diffusion Gallium self-diffusion in was measured directly in isotopically controlled GaP heterostructures.

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