By Eric Kerhervé, Didier Belot
This booklet offers an outline of present potency enhancement and linearization recommendations for silicon strength amplifier designs. It examines the most recent state-of-the-art applied sciences and layout concepts to deal with demanding situations for RF mobile cellular, base stations, and RF and mmW WLAN functions. insurance contains fabric on present silicon (CMOS, SiGe) RF and mmW strength amplifier designs, targeting merits and downsides in comparison with conventional GaAs implementations.
With this e-book you are going to learn:
- The ideas of linearization and potency development techniques
- The architectures permitting the optimal layout of multimode Si RF and mmW strength amplifiers
- How to make designs extra effective by way of utilising new layout options reminiscent of linearization and potency improvement
- Layout considerations
- Examples of schematic, format, simulation and size results
- Addresses the issues of excessive strength iteration, devoted development of non-constant envelope constellations, and effective and good keep an eye on strength radiation from built-in silicon chips
- Demonstrates how silicon know-how can resolve difficulties and trade-offs of strength amplifier layout, together with cost, measurement, complexity and efficiency
- Written and edited via the pinnacle participants to the field
Read or Download Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers: From RF to mmW PDF
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Additional resources for Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers: From RF to mmW
9] Sengupta K, Dasgupta K, Bowers SM, HajimiriA. On-chip sensing and actuation methods for integrated self-healing mm-wave CMOS power amplifiers. In: IEEE MTT-S international microwave symposium digest; June 2012. p. 1À3.  Kang J, Hajimiri A, Kim B. 4 GHz WLAN. In: IEEE international solid-state circuits conferences technical digest; February 2006. p. 761À9.  Chowdhury D, Hull C, Degani O, Goyal P, Wang Y, Niknejad A. 4 GHz 30 dBm power amplifier in 90 nm CMOS. In: IEEE international solid-state circuits conferences technical digest; February 2009.
7, consists of first making the division of “Q” by “I”, and then going through an interpolation table (LUT) where the required values of the “atan” function are stored. LUT length is function of the phase estimation precision. Precision of 1 (required in the current study) leads to 1440 bits of ROM. Because of the symmetry properties of “atan” function, the LUT size can be limited to half . Several architectures were proposed in the literature to implement the division, but the so-called Restoring Division Algorithm  was chosen because it enables higher working frequencies.
It is evident that the radiated field is circularly polarized due to the traveling wave nature of the signal generation. 2 Architecture To build large-scale arrays of such radiators to maximize the effective isotropic radiated power (EIRP) and to achieve beam steering for phased array applications, these DARs need to be mutually locked. Here, we demonstrate one such locking technique using transmission line networks and provide intuitive explanations for the same. If we place one coupling network between only two cross-coupled pairs, then it will ensure that they are driven in phase; however, the two DARs can still operate in opposite directions.